Ferroelectric properties and reliability of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on si for non-volatile memory applications
作者:
J. Lee,
R. Ramesh,
V.G. Keramidas,
O. Auciello,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 9,
issue 4
页码: 317-333
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012570
出版商: Taylor & Francis Group
关键词: Metallic oxide electrodes;ferroelectric nonvolatile memories.
数据来源: Taylor
摘要:
Highly oriented La-Sr-Co-O(LSCO)/Pb-La-Zr-Ti-O(PLZT)/La-Sr-Co-O heterostructures have been successfully grown on a highly oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The growth of oriented Pt film on the SiO2/Si substrate was made possible through the use of a thin bismuth titanate template layer which isc-axis oriented on the SiO2/Si substrate. The hybrid LSCO/Pt structure effectively reduced the sheet resistance of the electrodes by at least 3–5 times compared with a single LSCO electrode. These ferroelectric PLZT capacitors on Si exhibited symmetric hysteresis loops with very desirable ferroelectric properties. The test capacitors showed reliable performance at both room and high (100°C) temperatures with respect to fatigue, retention, aging, and imprint, suggesting that they can be used as reliable, nonvolatile memory elements.
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