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Low temperature operation of Ge‐Ag ohmic contacts to a high mobility two dimensional electron gas

 

作者: V. Chabasseur‐Molyneux,   J. E. F. Frost,   M. J. Tribble,   M. P. Grimshaw,   D. A. Ritchie,   A. C. Churchill,   G. A. C. Jones,   M. Pepper,   J. H. Burroughes,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 74, issue 9  

页码: 5883-5885

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354163

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ge‐Ag ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures are demonstrated. At 4.2 K, the specific contact resistance lies in the range 2–5 &OHgr; mm for anneals between 520 and 560 °C. The surface morphology is smooth, and the edge definition is of the order of 100 nm. Secondary ion mass spectroscopy analysis indicates that Ge diffusion is limited to within 2000 A˚ of the surface for a concentration of 1017cm−3in samples annealed at 540 °C and below.

 

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