Ultrafast dynamics of holes in GaAs probed by two-color femtosecond spectroscopy
作者:
F. Ganikhanov,
K. C. Burr,
C. L. Tang,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 1
页码: 64-66
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121724
出版商: AIP
数据来源: AIP
摘要:
Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. ©1998 American Institute of Physics.
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