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Ferroelectric thin films prepared by sol-gel processing

 

作者: Yuhuan Xu,   JohnD Mackenzie,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1992)
卷期: Volume 1, issue 1  

页码: 17-42

 

ISSN:1058-4587

 

年代: 1992

 

DOI:10.1080/10584589208215563

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric thin films;Sol-gel processing

 

数据来源: Taylor

 

摘要:

Ferroelectric thin films are playing a growing role as key elements in variety of devices. For various techniques of ferroelectric thin film preparation, the sol-gel processing is one of the most promising. In comparison with different deposition techniques, we survey the intrinsic advantages and the recent improvements of the sol-gel processing. In this review paper, several interesting topics, including epitaxial growth and grain-orientation, symmetric and asymmetricP-Ehysteresis loops, heterojunction effect of the interface between film and substrate, to attest pyroelectricity of the films, electrooptic coefficients in poled and unpoled films, possibility of amorphous ferroelectrics, etc., are introduced.

 

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