Ferroelectric thin films prepared by sol-gel processing
作者:
Yuhuan Xu,
JohnD Mackenzie,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1992)
卷期:
Volume 1,
issue 1
页码: 17-42
ISSN:1058-4587
年代: 1992
DOI:10.1080/10584589208215563
出版商: Taylor & Francis Group
关键词: ferroelectric thin films;Sol-gel processing
数据来源: Taylor
摘要:
Ferroelectric thin films are playing a growing role as key elements in variety of devices. For various techniques of ferroelectric thin film preparation, the sol-gel processing is one of the most promising. In comparison with different deposition techniques, we survey the intrinsic advantages and the recent improvements of the sol-gel processing. In this review paper, several interesting topics, including epitaxial growth and grain-orientation, symmetric and asymmetricP-Ehysteresis loops, heterojunction effect of the interface between film and substrate, to attest pyroelectricity of the films, electrooptic coefficients in poled and unpoled films, possibility of amorphous ferroelectrics, etc., are introduced.
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