Analysis of voltage noise in forward-biased silicon bipolar homojunctions: Low- and high-injection regimes
作者:
M. J. Martı´n,
D. Pardo,
J. E. Vela´zquez,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 23
页码: 3382-3384
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120554
出版商: AIP
数据来源: AIP
摘要:
An ensemble Monte Carlo (EMC) simulator has been used to study bipolar transport in siliconp+nandpn+homojunctions under forward-bias conditions, both in low- and high-injection regimes. The study focuses on a microscopic analysis of voltage fluctuations in such devices. The method of voltage-noise operation mode provides spatial analysis of the spectral density of voltage fluctuations under constant-current conditions. In the low-frequency range, the presence of shot, thermal, and excess noise due to hot carriers was found when the bias conditions were modified. Also, the EMC method permits ready evaluation of the noise equivalent temperature in both structures from the observed voltage fluctuations. ©1997 American Institute of Physics.
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