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Achievement of exceptionally high mobilities in modulation‐doped Ga1−xInxAs on InP using a stress compensated structure

 

作者: Albert Chin,   T. Y. Chang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 364-366

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.585072

 

出版商: American Vacuum Society

 

关键词: DOPED MATERIALS;GALLIUM ALLOYS;INDIUM ALLOYS;ARSENIC ALLOYS;INDIUM PHOSPHIDES;CARRIERS;MOBILITY;MEDIUM TEMPERATURE;HETEROSTRUCTURES;ALUMINIUM ALLOYS;MOLECULAR BEAM EPITAXY;ELECTRON DENSITY;ADATOMS;RHEED;THICKNESS;(Ga,In)As;(Al,In)As:Si

 

数据来源: AIP

 

摘要:

We report in this paper the achievement of unprecedented high mobilities of 15 200 and 123 000 cm2/V s with carrier concentrations of 1.84×1012and 1.81×1012cm−2at 300 and 77 K, respectively, through the use of a novel channel design utilizing oppositely strained layers withx=0.25 and 0.80 in Ga1−xInxAs. We have shown experimentally that the critical layer thickness for highly strained Ga1−xInxAs can be effectively enhanced by using such stress compensated structure. This novel modulation‐doped heterostructure with very high electron mobility should find important implications in very high speed electronics.

 

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