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Dislocations and Stacking Faults in Aluminum Nitride

 

作者: P. Delavignette,   H. B. Kirkpatrick,   S. Amelinckx,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 6  

页码: 1098-1100

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1736166

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Dislocations in thin platelets of aluminum nitride grown from the vapor phase appear to be of two types. Some are dissociated into partials of the Shockley type; others are undissociated. A model is given for both types. The stacking fault associated with the dissociated dislocations consists of one lamella of the sphalerite structure. The stacking fault energy is deduced from the width of the ribbons and from the shape of the extended nodes; its value is &ggr; ≈ 4 ergs/cm2.

 

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