首页   按字顺浏览 期刊浏览 卷期浏览 Photoluminescence Field Quenching and Breakdown of CdS at 4.2°K
Photoluminescence Field Quenching and Breakdown of CdS at 4.2°K

 

作者: Jick H. Yee,   George A. Condas,  

 

期刊: Journal of Applied Physics  (AIP Available online 1969)
卷期: Volume 40, issue 5  

页码: 2317-2320

 

ISSN:0021-8979

 

年代: 1969

 

DOI:10.1063/1.1657979

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A quenching of the exciton‐related blue‐edge photoluminescence was observed in high‐purity single crystals of CdS at their electrical breakdown at 4.2°K. The ionization or destruction of the exciton structures by the carriers in breakdown appeared to be an adequate explanation of this quenching. A differential negative resistance was also seen at breakdown and in some crystals after breakdown as well. This negative resistance was also studied in an attempt to understand the origin of the carriers in breakdown.

 

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