Photoluminescence Field Quenching and Breakdown of CdS at 4.2°K
作者:
Jick H. Yee,
George A. Condas,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 5
页码: 2317-2320
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657979
出版商: AIP
数据来源: AIP
摘要:
A quenching of the exciton‐related blue‐edge photoluminescence was observed in high‐purity single crystals of CdS at their electrical breakdown at 4.2°K. The ionization or destruction of the exciton structures by the carriers in breakdown appeared to be an adequate explanation of this quenching. A differential negative resistance was also seen at breakdown and in some crystals after breakdown as well. This negative resistance was also studied in an attempt to understand the origin of the carriers in breakdown.
点击下载:
PDF
(327KB)
返 回