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Irradiation-induced amorphization of the Al76Si4Mn20icosahedral quasicrystal

 

作者: Renhui Wang,   Heishichiro Takahashi,   Somei Ohnuki,   Zhouguang Wang,  

 

期刊: Radiation Effects and Defects in Solids  (Taylor Available online 1994)
卷期: Volume 129, issue 3-4  

页码: 173-180

 

ISSN:1042-0150

 

年代: 1994

 

DOI:10.1080/10420159408229016

 

出版商: Taylor & Francis Group

 

关键词: Icosahedral quasicrystal;irradiation effects;transmission electron microscopy;disordering;amorphization;crystalliztion

 

数据来源: Taylor

 

摘要:

Irradiation effect of the Al76Si4Mn20icosahedral quasicrystal (IQC) caused by 120 keV Ar ions and 1 MeV electrons has been studied by using transmission electron microscopy (TEM). The effect is dose and temperature dependent. At lower temperatures (≤345 K), Ar ions induces the Al-Si-Mn IQC fully amorphized. At medium temperature (352–400 K), only weak disordering and amorphization effects have been observed. At higher temperature (520∼670 K) no measurable effect has been observed by TEM. The temperature ranges are shifted to much lower temperatures for 1 MeV electron irradiation. The Ar ion and electron dual irradiation possesses the same effect as Ar ion irradiation. Heating the amorphized specimen to 600∼640 K induces it to transform to micro-quasicrystals and further heating to higher temperature (≥660 K) induces crystallization.

 

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