Irradiation-induced amorphization of the Al76Si4Mn20icosahedral quasicrystal
作者:
Renhui Wang,
Heishichiro Takahashi,
Somei Ohnuki,
Zhouguang Wang,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 129,
issue 3-4
页码: 173-180
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408229016
出版商: Taylor & Francis Group
关键词: Icosahedral quasicrystal;irradiation effects;transmission electron microscopy;disordering;amorphization;crystalliztion
数据来源: Taylor
摘要:
Irradiation effect of the Al76Si4Mn20icosahedral quasicrystal (IQC) caused by 120 keV Ar ions and 1 MeV electrons has been studied by using transmission electron microscopy (TEM). The effect is dose and temperature dependent. At lower temperatures (≤345 K), Ar ions induces the Al-Si-Mn IQC fully amorphized. At medium temperature (352–400 K), only weak disordering and amorphization effects have been observed. At higher temperature (520∼670 K) no measurable effect has been observed by TEM. The temperature ranges are shifted to much lower temperatures for 1 MeV electron irradiation. The Ar ion and electron dual irradiation possesses the same effect as Ar ion irradiation. Heating the amorphized specimen to 600∼640 K induces it to transform to micro-quasicrystals and further heating to higher temperature (≥660 K) induces crystallization.
点击下载:
PDF (1452KB)
返 回