Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells
作者:
J. M. Sallese,
J. F. Carlin,
M. Gailhanou,
M. Ilegems,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 16
页码: 2331-2333
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120022
出版商: AIP
数据来源: AIP
摘要:
We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only starts to decrease when the top barrier thickness falls below 1.5 nm, indicating that radiative recombinations in the islands are very efficient. These results are well understood by a model assuming a vacuum confinement energy close to 5 eV. ©1997 American Institute of Physics.
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