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Monte Carlo algorithm for generation‐recombination noise in semiconductors

 

作者: Lino Reggiani,   Paolo Lugli,   Vladimir Mitin,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 12  

页码: 925-927

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98803

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present an original Monte Carlo procedure to account for generation‐recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.

 

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