Oscillations in a SnO2‐based gas sensing device exposed to H2gas
作者:
Shinji Kanefusa,
Masayoshi Nitta,
Miyoshi Haradome,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 1
页码: 498-499
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328433
出版商: AIP
数据来源: AIP
摘要:
An oscillation has been found in the resistivity of gas sensing devices of sintered SnO2mixed with Pd, Rh, and MgO exposed to H2gas in air. This phenomenon depends on the H2gas concentration, the working device temperature, and the voltage applied to the device. Its waveforms consist of two structures and are conspicuously noticeable at 92 °C device temperature and 40 V voltage applied across the device.
点击下载:
PDF
(156KB)
返 回