Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
作者:
K. Mohammed,
D. A. Cammack,
R. Dalby,
P. Newbury,
B. L. Greenberg,
J. Petruzzello,
R. N. Bhargava,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 1
页码: 37-39
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98119
出版商: AIP
数据来源: AIP
摘要:
We report a detailed study of the effect of lattice mismatch on ZnSe epilayers grown on 〈001〉 GaAs by molecular beam epitaxy using photoluminescence (PL), x‐ray diffraction, and transmission electron microscopy (TEM) techniques. We find that our samples are of high quality, exhibiting sharp and strong bound excitons, and that these bound excitons shift to higher energies due to tetragonal distortion as the thickness of the ZnSe epilayer is systematically reduced from ∼1 to 0.1 &mgr;m. Fairly good agreement is found between PL and x‐ray data for the total strain relaxation as a function of layer thickness. TEM measurements are also used to estimate an inelastic component of the strain relaxation in the layers.
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