Sub‐quarter‐micron gate‐level device development and process integration of a complimentary metal oxide semiconductor (CMOS) program are being supported at IBM Microelectronics’ Advanced Semiconductor Technology Center with both synchrotron orbital radiation lithography (proximity x‐ray) and phase‐edge deep ultraviolet phase‐shifted‐mask lithography. Data highlighting the feasibility of these two advanced techniques for the lithography support of very aggressive CMOS technologies are presented. Issues of design complexity, design rule impact, and mask engineering are discussed, the exposure process is described, and current process latitude data are presented. Both lithography techniques show feasibility for 200 nm lithography, each with its unique set of challenges and trade‐offs.