Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature
作者:
Hiroyuki Okuyama,
Eisaku Kato,
Satoshi Itoh,
Norikazu Nakayama,
Toyoharu Ohata,
Akira Ishibashi,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 6
页码: 656-658
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114120
出版商: AIP
数据来源: AIP
摘要:
Room‐temperature operation of ZnSe‐active‐layer double heterostructure laser diode has succeeded. The lasing wavelength was 471 nm. The emission energy shift with the increasing current is explained by the band filling and the band shrinkage. The threshold carrier density is calculated to be 4×1018cm−3. The mechanism of the stimulated emission of II–VI double heterostructure laser diode is concluded to be the recombination of the electron‐hole plasma. ©1995 American Institute of Physics.
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