The neutralization of deep‐level centers associated with palladium and platinum in silicon after exposure to a low‐pressure hydrogen plasma has been observed using transient junction‐capacitance spectroscopy. Inn‐type silicon, a palladium‐related level atEc−0.22 eV and platinum‐related level atEc−0.28 eV were neutralized by a low‐temperature (300 °C) plasma treatment. Inp‐type silicon, a palladium‐related level atEv+0.32 eV was also neutralized by this treatment, but a platinum‐related level atEv+0.33 eV was unaffected by hydrogen plasma exposure. Possible mechanisms for the observed reduction in defect electrical activity are discussed.