The vapor of the organic halide, ethylene dibromide (EDB), was used for InPinsituetching. The etching process was carried out in a low pressure (≂50 Pa) flowing system. A two‐zone resistance‐heated furnace was employed such that EDB molecules were decomposed to yield a more reactive form of bromine in the high temperature zone, whereas the substrate was placed in the low temperature zone to avoid thermal degradation of the InP. Surfaces as specular as before etching were obtained by using this technique. The process was studied for substrate temperatures between 120 and 540 °C and for hot zone temperatures between 600 and 900 °C. The etch rate varied between 0.002 and 1.0 μm/min depending on the furnace temperature and the EDB flow rate.