An etch‐pitting technique is described for revealing the points of intersection of dislocations with the (100) and (001) surfaces of calcium tungstate single crystals; each etch pit represents one dislocation. The dislocation configuration that is responsible for the residual strain in as‐grown ``a'' axis crystals and the mechanism of its growth from the melt are discussed. Preliminary results concerning the distribution of impurities in doped calcium tungstate crystals and the effect of doping on dislocation density and distribution are described. The solution behavior of calcium tungstate in various solvents and a chemical polishing procedure for calcium tungstate are presented.