The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
作者:
A. F. Wright,
Ulrike Grossner,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 19
页码: 2751-2753
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122579
出版商: AIP
数据来源: AIP
摘要:
Density-functional-theory calculations have been performed to study the effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN. Four candidate structures were examined and their formation energies were found to depend strongly on Fermi level and growth stoichiometry. A structure having gallium vacancies at the dislocation core is predicted to be most stable inn-type material grown under nitrogen-rich conditions, while a structure without vacancies is most stable inp-type material grown under these conditions. In material grown under gallium-rich conditions, a structure having nitrogen vacancies at the dislocation core is predicted to be most stable inp-type material, whereas a variety of core structures should be present inn-type material. Edge dislocations are predicted to behave as electron traps inn-type material and may act as hole traps inp-type material depending on the growth conditions. ©1998 American Institute of Physics.
点击下载:
PDF
(80KB)
返 回