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Investigation of radiation damage in silicon by a backscattering method

 

作者: Gerhard Götz,   Karl Hehl,   Friedhelm Schwabe,   Ernst Glaser,  

 

期刊: Radiation Effects  （Taylor Available online 1975）
卷期: Volume 25, issue 1  

页码: 27-32

 

ISSN:0033-7579

 

年代: 1975

 

DOI:10.1080/00337577508242050

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The dose dependence of lattice disorder produced by implanted argon ions of energy 200 ke V has been investigated for doses between 2 × 1013/cm2and 1 × 1017/cm2and four implantation temperatures, -196°C, 20°C, 200°C and 400°C. The radiation damage was determined by means of the channelling technique with 1.4 MeV He+-ions.

 

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