Quantitative determination of high‐temperature oxygen microprecipitates in Czochralski silicon by micro‐Fourier transform infrared spectroscopy
作者:
A. Borghesi,
M. Geddo,
B. Pivac,
A. Sassella,
A. Stella,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 19
页码: 2099-2101
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104999
出版商: AIP
数据来源: AIP
摘要:
Oxygen content in the bulk of Czochralski silicon was analyzed by using micro‐Fourier transform infrared spectroscopy in a transversal wafer cross‐section configuration. This technique locally distinguishes between interstitial oxygen and oxygen precipitates in wafers used as substrates for epitaxial layer growth. Systematic measurements performed in the 5000–700 cm−1wavenumber range clearly indicate the presence of oxygen microprecipitates in the bulk of the processed silicon wafers. Quantitative determination of oxygen precipitate density is reported and compared with the measured interstitial oxygen concentration.
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