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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

 

作者: Shuji Nakamura,   Masayuki Senoh,   Shin-ichi Nagahama,   Naruhito Iwasa,   Takao Yamada,   Toshio Matsushita,   Hiroyuki Kiyoku,   Yasunobu Sugimoto,   Tokuya Kozaki,   Hitoshi Umemoto,   Masahiko Sano,   Kazuyuki Chocho,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 2  

页码: 211-213

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.120688

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InGaN multi-quantum-well-structure laser diodes withAl0.14Ga0.86N/GaNmodulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 &mgr;m etching of the ELOG substrate, the etch pit density was about2×108cm2in the region of the 4-&mgr;m-wide stripe window, but almost zero in the region of the 7-&mgr;m-wideSiO2stripe. ©1998 American Institute of Physics.

 

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