首页   按字顺浏览 期刊浏览 卷期浏览 Temperature-independent transport in high-mobility pentacene transistors
Temperature-independent transport in high-mobility pentacene transistors

 

作者: S. F. Nelson,   Y.-Y. Lin,   D. J. Gundlach,   T. N. Jackson,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 15  

页码: 1854-1856

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121205

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials. ©1998 American Institute of Physics.

 

点击下载:  PDF (66KB)



返 回