Temperature-independent transport in high-mobility pentacene transistors
作者:
S. F. Nelson,
Y.-Y. Lin,
D. J. Gundlach,
T. N. Jackson,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 15
页码: 1854-1856
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121205
出版商: AIP
数据来源: AIP
摘要:
The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials. ©1998 American Institute of Physics.
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