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A new electron beam evaporation source for Si molecular beam epitaxy controlled by a quadrupole mass spectrometer

 

作者: G. Peter,   A. Koller,   S. Vazquez,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  (AIP Available online 1991)
卷期: Volume 9, issue 6  

页码: 3061-3063

 

ISSN:0734-2101

 

年代: 1991

 

DOI:10.1116/1.577173

 

出版商: American Vacuum Society

 

关键词: SILICON;MOLECULAR BEAM EPITAXY;MASS SPECTROMETERS;QUADRUPOLES;VACUUM SYSTEMS;ELECTRON BEAMS;BEAM PRODUCTION;SENSORS;Si

 

数据来源: AIP

 

摘要:

A new electron beam source was developed according to ultrahigh vacuum design rules. It is rate controlled by means of a quadrupole mass spectrometer based flux meter. Preprogrammed and stored wobble patterns with a large frequency range prior and (for most materials) during evaporation improve the performance of operation and enable a high utilization of the material. A very stable operation is achieved by simultaneously controlling not only the power but also the power density. Long term stability, material utilization, dynamic range, minimum controllable rate and reproducibility were investigated especially for Si molecular beam epitaxy.

 

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