Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
作者:
Y. S. Lin,
H. M. Shieh,
W. C. Hsu,
J. S. Su,
J. Z. Huang,
Y. H. Wu,
S. D. Ho,
W. Lin,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 958-961
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590053
出版商: American Vacuum Society
关键词: (In,Ga)P;GaAs
数据来源: AIP
摘要:
We propose an improvedIn0.5Ga0.5P/GaAsheterostructure-emitter bipolar transistor (HEBT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The recombination atp-ninterface can be significantly reduced at low collector current using 100 Å undoped GaAs spacers. Meanwhile, the emitter edge thinning technique is used to reduce the surface recombination current. The passivated device reveals a current gain as high as 360, along with an offset voltage as low as 80 mV. Moreover, the measured results indicate that the current gains vary slowly with temperature. In order to demonstrate that the emitter edge-thinning technique can effectively reduce the surface recombination current, the emitter size effect on current gain is also investigated.
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