High‐power cw operation of InGaAs/GaAs surface‐emitting lasers with 45° intracavity micro‐mirrors
作者:
S. S. Ou,
M. Jansen,
J. J. Yang,
L. J. Mawst,
T. J. Roth,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 17
页码: 2085-2087
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106140
出版商: AIP
数据来源: AIP
摘要:
High‐power cw operation of horizontal‐cavity, monolithic InGaAs/GaAs surface‐emitting lasers with all dry etched micro‐mirrors has been demonstrated for the first time. The 45° and 90° micro‐mirrors of the devices were fabricated by ion‐beam etching and reactive ion etching techniques, respectively. Threshold‐current densities of less than 500 A/cm2, external differential quantum efficiencies of 10% (0.12 W/A) from the emitting facet, and output powers in excess of 100 mW were achieved from uncoated devices driven under cw operation.
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