首页   按字顺浏览 期刊浏览 卷期浏览 Step induced desorption of AsHxin atomic layer epitaxy on GaAs (001) vicinal substrates
Step induced desorption of AsHxin atomic layer epitaxy on GaAs (001) vicinal substrates

 

作者: Jeong‐Sik Lee,   Sohachi Iwai,   Hideo Isshiki,   Takashi Meguro,   Takuo Sugano,   Yoshinobu Aoyagi,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 9  

页码: 1283-1285

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114398

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We investigate the growth rate of GaAs homoepitaxy on (001) just and vicinal substrates as a function of substrate temperature, feeding rate of source gases, and H2purge duration during the atomic layer epitaxy (ALE) process. The desorption of AsHx(x=0, 1, 2) on vicinal surfaces during ALE was confirmed to be the migration of adsorbed AsHxmolecules on the surface and desorption at the steps. ©1995 American Institute of Physics.

 

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