Sputtered ferroelectric thin films for dynamic random access memory applications
作者:
Jack Lee,
Vinay Chikarmane,
Chandra Sudhama,
Jiyoung Kim,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1993)
卷期:
Volume 3,
issue 2
页码: 113-120
ISSN:1058-4587
年代: 1993
DOI:10.1080/10584589308216705
出版商: Taylor & Francis Group
关键词: ferroelectrics;DRAM;thin dielectrics
数据来源: Taylor
摘要:
A low thermal budget (with 550°C annealing) process with Ti-compensation for sputtered ferroelectric PZT thin films has been developed. PZT films with a composition near the morphotrophic phase boundary (Zr/Ti = 53/47) annealed at 550°C for 1 hr in a N2ambient exhibits high charge storage density and low leakage current density, which are the important requirements of dielectric materials for ULSI DRAM cells. It was also found that Ti compensated films show good fatigue endurance in comparison with non-Ti compensated films.
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