Ion‐irradiation control of photoluminescence from porous silicon
作者:
J. C. Barbour,
D. Dimos,
T. R. Guilinger,
M. J. Kelly,
S. S. Tsao,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 17
页码: 2088-2090
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106141
出版商: AIP
数据来源: AIP
摘要:
Ion irradiation was used to pattern a region of red‐light emitting porous silicon by eliminating visible‐light photoluminescence (PL). The PL peak wavelength is approximately 735 nm and shows little dependence on the excitation‐light wavelength. The ratio of PL intensities for different excitation wavelengths was shown to be proportional to the ratio of the absorption coefficients. Below saturation, the integrated PL intensity increased linearly with excitation‐light power density.
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