Using Raman spectroscopy we have investigated the spacing of the electron subbands in nominally &dgr;‐doped GaAs structures which show a considerable spread of the silicon dopant atoms along the growth direction. For optical excitation in resonance with theE0+&Dgr;0band gap, spin‐density intersubband excitations are observed. For excitation in resonance with theE1band gap we find a strong enhancement of scattering by collective intersubband plasmon‐phonon modes. The measured energy spacings between the electron subbands deviate significantly from what is expected for ideal &dgr; doping. Self‐consistent electronic subband calculations taking into account the spread of the dopant atoms along the growth direction, in contrast, yield a good quantitative agreement between calculated and measured subband spacings. This demonstrates the potential of intersubband Raman spectroscopy for the analysis of the spatial localization of dopant atoms in &dgr;‐doped structures.