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The effective microwave surface impedance of highTcthin films

 

作者: N. Klein,   H. Chaloupka,   G. Mu¨ller,   S. Orbach,   H. Piel,   B. Roas,   L. Schultz,   U. Klein,   M. Peiniger,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 11  

页码: 6940-6945

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345037

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The dependence of the effective surface impedanceZeff=Reff+iXeffof superconducting thin films on the film thicknessd, on the magnetic field penetration depth &lgr;, and on the dielectric properties of the substrate material is investigated theoretically by means of impedance transformations. It was found that the effective surface resistanceReffcan be expressed byRSf(d/&lgr;)+RtranswhereRSis the intrinsic surface resistance of the superconductor. The functionf(d/&lgr;) describes the altered current density distribution in the film.Rtransarises from power transmission through the film. It depends ondand &lgr; as well as on the dielectric properties of the substrate material and is significantly altered in the case of a resonant background. The effective surface reactanceXeffof a superconducting thin film can be expressed byXS cosh(d/&lgr;) whereXS=&ohgr;&mgr;0&lgr; is the intrinsic surface reactance. Measurements ofZeffat 87 GHz have been performed for YBa2Cu3O7−&dgr;thin films grown epitaxially by laser ablation on SrTiO3, MgO, and LaAlO3. With the best films,Reff(77 K) values of 21 m&OHgr; andRS(77 K) values of 8 m&OHgr; were achieved. The temperature dependence of &lgr; was found to be in good agreement to both weak‐coupling BCS theory in the clean limit and the empirical two‐fluid model relation with &lgr; (0 K) values ranging from 140 to 170 nm and 205 to 250 nm, respectively.

 

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