Ferroelectric heterostructures ofAu/Pb(Zr0.52Ti0.48)O3/SiO2/SiandAu/Pb(Zr0.52Ti0.48)O3/Sihave been fabricated by using laser ablation technique. Electrical properties of these ferroelectric field-effect transistors have been characterized through both the current vs voltage and capacitance vs voltage (C–V) measurements. The C–V characteristics ofAu/Pb(Zr0.52Ti0.48)O3/SiO2/Siheterostructures demonstrate a polarization switching behavior, showing a memory window as much as 1 V at 1 kHz. In addition, the experimental results reveal that aSiO2buffer layer is essential for memory properties in theAu/Pb(Zr0.52Ti0.48)O3/SiO2/Sigate structure. ©1997 American Institute of Physics.