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Fabrication of quantum devices in metals and semiconductors

 

作者: H. Schmid,   S. A. Rishton,   D. P. Kern,   S. Washburn,   R. A. Webb,   A. Kleinsasser,   T. H. P. Chang,   A. Fowler,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 1  

页码: 122-126

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584027

 

出版商: American Vacuum Society

 

关键词: MOSFET;FABRICATION;LITHOGRAPHY;ELECTRON BEAMS;ELECTRICAL PROPERTIES;SIZE EFFECT;AHARONOV−BOHM EFFECT;WEAK LINKS;MEASURING METHODS;SCATTERING;DESIGN;METALS;SEMICONDUCTOR MATERIALS;GALLIUM ARSENIDES;SILICON

 

数据来源: AIP

 

摘要:

Advances in nanolithography using electron‐beam techniques have allowed a great variety of quantum devices to be fabricated and tested. The critical dimensions governing the design of these devices will be discussed. Fabrication and experimental results of several such devices for studies will be reported. These include structures aiming at the observation of the electrostatic Aharonov–Bohm effect and nonlocal oscillations, superconducting weak links, and devices for the investigation of quantum scattering effects.

 

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