Electroabsorption spectroscopy of amorphous Si/SiC quantum well structures
作者:
K. Hattori,
M. Tsujishita,
H. Okamoto,
Y. Hamakawa,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 8
页码: 763-765
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101799
出版商: AIP
数据来源: AIP
摘要:
The interband optical transition in quantum wells of hydrogenated amorphous silicon and silicon carbide has been studied by using electroabsorption (EA) spectroscopy. The observed EA spectrum exhibits a triangular line shape, identified as being due to a field‐induced modification of the subband transition. The identification is confirmed by comparing with the experimental result of thermoabsorption spectroscopy.
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