Photoluminescence of pseudomorphic SiGe formed by74Ge+ion implantation in the overlayer of silicon-on-insulator material
作者:
C. J. Patel,
Q. X. Zhao,
O. Nur,
M. Willander,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 23
页码: 3047-3049
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121536
出版商: AIP
数据来源: AIP
摘要:
A metastable SiGe-on-insulator structure is realized by a high-dose74Ge+ion implantation in the overlayer of silicon-on-insulator followed by solid phase epitaxial regrowth. Studies of the optical properties of the germanium-implanted and post-implantation annealed layers with 18&percent; peak germanium concentration were carried out using photoluminescence (PL) spectroscopy. The electrical integrity of the strained layer was qualitatively inferred from the pseudo-mosfet characterization technique. The PL results show that the broadband (BB) emission related to germanium implantation damage can be completely eliminated by post-implantation thermal treatment. PL spectra and measured transconductance of the sample heat-treated at 500 °C indicate conclusively that a defect-free strained SiGe layer has been formed. However, samples heat-treated at higher temperatures show degradation in the charge carrier lifetime, a new BB emission with 0.816 eV peak energy and an emergence of defect related emission at 0.870 eV for samples annealed at and above 900 °C. ©1998 American Institute of Physics.
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