Crystal orientation dependence of the electrical transport and lattice structure of zinc selenide films grown by metalorganic chemical vapor deposition
作者:
W. Stutius,
F. A. Ponce,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 4
页码: 1548-1553
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.336089
出版商: AIP
数据来源: AIP
摘要:
ZnSe films have been grown on 〈100〉, 〈110〉, and 〈111〉BGaAs surfaces, using the metalorganic chemical vapor deposition technique. The electrical transport properties and lattice structure characteristics of these films have been studied using a van der Pauw technique and high‐resolution transmission electron microscopy. The electrical and structural properties of these films vary significantly with growth direction. In (100) layers, the observed defects are similar in nature to isolated compensated centers. For other orientations, observed properties are best described in terms of extended defects and grain boundaries.
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