High‐energy Fe and Co implantations were performed into InP:Sn at room temperature and 200 °C in the energy range 0.34–5.0 MeV. Range statistics were calculated for these ions in the above energy range. For the room‐temperature implants, implant redistribution peaks around 0.8RpandRp+&Dgr;Rp, and both in‐ and out‐diffusion of the implant are observed in the secondary‐ion‐mass‐spectroscopy profiles of the annealed samples. The implant redistribution present in the room‐temperature implants is much different than in elevated‐temperature implants. For buried (high‐energy) implants, much of the implant diffusion is eliminated if the implants are performed at 200 °C. For 200 °C implants, the yield of the Rutherford backscattering spectra on the annealed samples is close to that of a virgin sample. The MeV energy Fe and Co implantations at 200 °C are useful to obtain thermally stable, buried, and high‐resistance layers of good crystalline quality inn‐type InP and for the compensation of the tail of the buriedn‐type implant. However, due to the low solubility of Fe and Co in InP, the implants of these species are useful only to compensaten‐type carriers with concentrations below 1017cm−3.