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Bound‐free intraband absorption in GaAs‐AlxGa1−xAs semiconductor quantum wells

 

作者: Z. Ikonic´,   V. Milanovic´,   D. Tjapkin,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 3  

页码: 247-249

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.100979

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The spectral characteristics of intraband absorption on bound‐free transitions in semiconductor quantum wells are analyzed. Numerical results indicate that both comparatively narrowband (∼30 meV) and broadband (≳200 meV) absorption may occur, which may be important in infrared detector design.

 

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