首页   按字顺浏览 期刊浏览 卷期浏览 Determination of frontier orbital alignment and band bending at an organic semiconducto...
Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurements

 

作者: R. Schlaf,   B. A. Parkinson,   P. A. Lee,   K. W. Nebesny,   N. R. Armstrong,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 8  

页码: 1026-1028

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122073

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The alignment of the highest occupied molecular orbitals (HOMO) at the tris (8-hydroxy quinoline) aluminum(Alq3)/N,N′-di-(3-methylphenyl)-N,N′diphenyl-4,4′-diaminobiphenyl (TPD) heterojunction, used in organic light-emitting diodes (OLED), was determined by growing a TPD layer in several steps on a thickAlq3substrate layer. After each growth step the sample was characterizedin situby x-ray and ultraviolet photoemission spectroscopy. The offset of the HOMO maxima at the interface was determined to be −0.13 eV fromAlq3to TPD. By including the known HOMO–lowest occupied molecular orbital (LUMO) gaps for both molecules into the evaluation, the offset of the LUMO minima was determined to be −0.33 eV fromAlq3to TPD. These values are consistent with previous assumptions that this interface represents a higher barrier for electron injection fromAlq3to TPD than for hole injection from TPD toAlq3.©1998 American Institute of Physics.

 

点击下载:  PDF (99KB)



返 回