Effects of isolation materials on facet formation for silicon selective epitaxial growth
作者:
H.-C. Tseng,
C. Y. Chang,
F. M. Pan,
J. R. Chen,
L. J. Chen,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 16
页码: 2328-2330
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120033
出版商: AIP
数据来源: AIP
摘要:
Effects of isolation materials on facet formation for low temperature Si selective epitaxial growth (SEG) usingSi2H6have been demonstrated by ultrahigh vacuum-chemical molecular epitaxy (UHV-CME) system. The activation energy of the Si epitaxial growth is 47.35 Kcal/mol. The isolation material includes silicon nitride, wet oxide, and tetraethylorthosilicate (TEOS) oxide. Different isolation materials have different faceting behaviors for the Si epilayer. A silicon nitride mask and a wet oxide mask result in a preferred faceting plane of (111) and (311), respectively. Using a TEOS oxide mask, we obtain a low temperature Si SEG layer without facet and twin formation. The preferred faceting plane orientation for different isolation materials is ascribed to the difference in the interface free energy between the Si layer and the isolation material. ©1997 American Institute of Physics.
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