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Alloying of Au layers and redistribution of Cr in GaAs

 

作者: T. J. Magee,   J. Peng,   J. D. Hong,   V. R. Deline,   C. A. Evans,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 35, issue 8  

页码: 615-617

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91227

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Alloying of Au films on Cr‐doped GaAs substrates and Sn‐doped LPE layers grown on semi‐insulating substrates has been investigated by TEM and SIMS profiling. Annealing at 350 °C for variable periods was found to produce rapid outdiffusion of Cr into regions of near‐surface damage induced by strain effects at the interface and subsequent diffusion of Au into the GaAs.

 

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