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Characterization of oxide film on titanium by scanning tunneling microscopy/spectroscopy: Influence of the tip composition

 

作者: M. Jobin,   R. Emch,   F. Zenhausern,   S. Steinemann,   P. Descouts,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1991)
卷期: Volume 9, issue 2  

页码: 1263-1267

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585217

 

出版商: American Vacuum Society

 

关键词: TITANIUM OXIDES;THIN FILMS;ELECTRONIC STRUCTURE;SURFACE STRUCTURE;SCANNING TUNNELING MICROSCOPY;IV CHARACTERISTIC;AMORPHOUS STATE;ENERGY GAP;OPTICAL MICROSCOPY;HIGH−RESOLUTION METHODS;TiO2

 

数据来源: AIP

 

摘要:

Atomic level structural and electronic analysis of titanium passivated by an oxide film is crucial for understanding the biocompatible properties of this transition metal. Scanning tunneling microscope (STM) images of electropolished titanium samples show a rather smooth surface in the nanometer range with structure attributed to surface defects induced by the electropolishing technique.I–Vspectra were performed with the STM using W, PtIr, and Au tips. These spectra completed by normalized conductivities spectra are compared and discussed in order to determine surface electronic properties of the oxide film and to estimate the influence of the STM tip. The surface band gap of this amorphous thin film mainly composed of TiO2is shifted to positive tip voltage and is similar to the one of ann‐type semiconductor with band bending bringing the valence band closer to the Fermi level. The surface band gap extends from −0.5 to +0.8 eV for a Au tip and from −0.1 to 0.7 eV for a W tip, which shows that W induces states in the band gap. Reproducible peaks in the local density of states of our Ti oxide surface appear both for Au and W tips at the same energies and are clearly apparent in the normalized conductivity curves.

 

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