Investigation of the amorphous‐to‐microcrystalline transition of hydrogenated silicon films by spectroscopic ellipsometry
作者:
T. V. Herak,
J. J. Schellenberg,
P. K. Shufflebotham,
K. C. Kao,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 2
页码: 688-693
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341962
出版商: AIP
数据来源: AIP
摘要:
Spectroscopic ellipsometry and x‐ray diffraction measurements have been used to obtain structural information on hydrogenated amorphous and microcrystalline silicon thin films. The films were deposited onto quartz substrates from a microwave plasma in SiH4/H2gas mixture. For ellipsometric data analysis, the films were modeled as multilayer structures with the dielectric response of each layer calculated as a function of the amorphous, crystallite, and void volume fractions through an effective‐medium approximation. Results indicate that the transition from amorphous‐to‐microcrystalline films is accompanied by a reduction in the material density and a significant increase in the surface roughness overlayer. X‐ray diffraction measurements estimate a higher volume fraction of crystallites as compared to that obtained from optical data.
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