Plasma deposition of GaP and GaN
作者:
J. C. Knights,
R. A. Lujan,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 3
页码: 1291-1293
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325024
出版商: AIP
数据来源: AIP
摘要:
We report the preparation of thin films of gallium phosphide and gallium nitride by deposition from low‐pressure rf‐excited plasmas in mixtures of trimethylgallium with ammonia and phosphine, respectively. With the deposition conditions used, the gallium phosphide is found to be amorphous, while the gallium nitride is polycrystalline. We present preliminary measurements of optical and electrical properties.
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