Symmetric rate model for fluorocarbon plasma etching of SiO2
作者:
Ji Ding,
Noah Hershkowitz,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 12
页码: 1619-1621
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115670
出版商: AIP
数据来源: AIP
摘要:
A symmetric rate model for plasma etching and plasma deposition in fluorocarbon plasmas is proposed. When there is no deposition, the symmetric rate model gives a plasma etch rate. When there is no etching, the model gives a plasma deposition rate. Electron cyclotron resonance and reactive ion etcher etch rates of SiO2in CF4plasma are found to be consistent with the model. ©1996 American Institute of Physics.
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