首页   按字顺浏览 期刊浏览 卷期浏览 Effect of ion-implantation into thermal SiO2-films on sodium ion drift
Effect of ion-implantation into thermal SiO2-films on sodium ion drift

 

作者: C. Fritzsche,   A. Goetzberger,   A. Axmann,   W. Rothemund,   G. Sixt,  

 

期刊: Radiation Effects  （Taylor Available online 1971）
卷期: Volume 7, issue 1-2  

页码: 87-93

 

ISSN:0033-7579

 

年代: 1971

 

DOI:10.1080/00337577108232567

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Sodium and nitrogen was implanted at 20 keV and 80 keV into MOS capacitors. The influence of the implantation on sodium ion drift was studied by temperature bias treatments combined with capacitance-voltage measurements. An ion trapping effect at the electrode is observed which is strongly enhanced by 20 keV implantations and the mobile ion content can be completely depleted by repeated drift treatments.

 

点击下载:  PDF (384KB)



返 回