High accuracy Raman measurements using the Stokes and anti-Stokes lines
作者:
Witold Trzeciakowski,
Juan Marti´nez-Pastor,
Andre´s Cantarero,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 8
页码: 3976-3982
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366537
出版商: AIP
数据来源: AIP
摘要:
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applied biaxial strain, laser power, and temperature. ©1997 American Institute of Physics.
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