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Plasma‐processed positive and negative resist behavior of obliquely deposited amorphous P–Se films

 

作者: P. K. Gupta,   Ajay Kumar,   L. K. Malhotra,   K. L. Chopra,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 6  

页码: 1590-1593

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.582944

 

出版商: American Vacuum Society

 

关键词: PLASMA JETS;ETCHING;SURFACE REACTIONS;SELENIDES;PHOSPHORUS COMPOUNDS;LITHOGRAPHY;CARBON TETRAFLUORIDE;(P,Se)

 

数据来源: AIP

 

摘要:

Thin films of amorphous phosphorus decaselenide (P4Se10) have been explored for lithographic applications. Depending on the substrate temperature during plasma etching in CF4gas, either positive or negative resist behavior is observed. The effects of substrate temperature and exposure time on etching characteristics are discussed. Contrast values of 2.5 and 2.9 for positive and negative resist, respectively, have been obtained.

 

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