The 1.4 and 248 nm radiation response of chemically amplified resists containing arylmethyl sulfone photoacid generators
作者:
J. E. Hanson,
D. A. Pingor,
A. E. Novembre,
D. A. Mixon,
M. P. Bohrer,
J. M. Kometani,
W. W. Tai,
期刊:
Polymers for Advanced Technologies
(WILEY Available online 1994)
卷期:
Volume 5,
issue 1
页码: 49-55
ISSN:1042-7147
年代: 1994
DOI:10.1002/pat.1994.220050107
出版商: John Wiley&Sons, Ltd.
关键词: X‐ray and deep UV lithography;Photoacid generators
数据来源: WILEY
摘要:
AbstractThe X‐ray (1.4 nm) and deep UV (248 nm) radiation responses of chemically amplified photoresists incorporating arylmethyl sulfone photoacid generators were evaluated. The arylmethyl sulfones were primarily derivatives of benzyl phenyl sulfone, selected to reveal the importance of desulfonylation and internal abstraction with regard to the photochemical efficiency of acid generation. At 1.4 nm, benzyl phenyl sulfone gave a much more sensitive resist than dibenzyl sulfone, while the methyl derivatives of benzyl phenyl sulfone did not give much improvement over the parent compound. This suggests that desulfonylation is more important than internal abstraction for increased photochemical efficiency. At 248 nm, similar trends were observed, but with some modifications arising from the variation in extinction coefficient among the sulfones. Sensitivities at or below 20 mJ/cm2were obtained for both wavelength range
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