Photoablation: Schottky barriers on patterned Si surfaces
作者:
H. Grebel,
K. J. Fang,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 1
页码: 367-370
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359331
出版商: AIP
数据来源: AIP
摘要:
Easy to make, patterned, Schottky barriers are investigated. In particular, the following aspects have been considered: the patterning technique, the electrical barrier height, and potential usage as solar cells. Patterning of the Si surfaces was achieved by photoablation process using an UV excimer laser in a presence of various solutions. Using a 5 mW red HeNe laser launched at various angles on the Si surface we have found that patterned solar cells ablated with 2:3:100 of HF:HNO3:H2O were as much as 23% more efficient than nonpatterned cells. ©1995 American Institute of Physics.
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