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Photoablation: Schottky barriers on patterned Si surfaces

 

作者: H. Grebel,   K. J. Fang,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 77, issue 1  

页码: 367-370

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359331

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Easy to make, patterned, Schottky barriers are investigated. In particular, the following aspects have been considered: the patterning technique, the electrical barrier height, and potential usage as solar cells. Patterning of the Si surfaces was achieved by photoablation process using an UV excimer laser in a presence of various solutions. Using a 5 mW red HeNe laser launched at various angles on the Si surface we have found that patterned solar cells ablated with 2:3:100 of HF:HNO3:H2O were as much as 23% more efficient than nonpatterned cells. ©1995 American Institute of Physics.

 

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